RS6N120BHTB1
detaildesc

RS6N120BHTB1

Rohm Semiconductor

型号:

RS6N120BHTB1

封装:

8-HSOP

批次:

-

数据手册:

pdf

描述:

NCH 80V 135A, HSOP8, POWER MOSFE

购买数量:

递送:

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付款:

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库存 : 2458

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.6885

    $2.6885

  • 10

    $2.2306

    $22.306

  • 100

    $1.775645

    $177.5645

  • 500

    $1.502425

    $751.2125

  • 1000

    $1.274796

    $1274.796

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.9mOhm @ 60A, 6V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package 8-HSOP
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 3W (Ta), 104W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 135A (Ta), 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number RS6N120