RQ3E080GNTB
Rohm Semiconductor
型号:
RQ3E080GNTB
封装:
8-HSMT (3.2x3)
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 8A 8HSMT
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 16.7mOhm @ 8A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
| Series | - |
| Package / Case | 8-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Rohm Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | RQ3E080 |
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