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RJS6004WDPK-00#T0
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RJS6004WDPK-00#T0

Renesas Electronics America Inc

型号:

RJS6004WDPK-00#T0

封装:

TO-3P

批次:

-

数据手册:

-

描述:

DIODE GEN PURP 600V 20A

购买数量:

递送:

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付款:

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库存 : 请查询

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产品信息

参数信息

用户指南

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 15 ns
Mounting Type Through Hole
Product Status Obsolete
Supplier Device Package TO-3P
Current - Reverse Leakage @ Vr 10 µA @ 600 V
Series -
Package / Case TO-220-3 Full Pack
Technology SiC (Silicon Carbide) Schottky
Diode Configuration 1 Pair Common Cathode
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A
Mfr Renesas Electronics America Inc
Voltage - DC Reverse (Vr) (Max) 600 V
Package Tube
Current - Average Rectified (Io) (per Diode) 10A (DC)
Operating Temperature - Junction -55°C ~ 150°C