RJM0603JSC-00#12
detaildesc

RJM0603JSC-00#12

Renesas Electronics America Inc

型号:

RJM0603JSC-00#12

封装:

20-HSOP

批次:

-

数据手册:

pdf

描述:

MOSFET 3N/3P-CH 60V 20A HSOP

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature 175°C
FET Feature Logic Level Gate, 4.5V Drive
Configuration 3 N and 3 P-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package 20-HSOP
Drain to Source Voltage (Vdss) 60V
Series Automotive, AEC-Q101
Package / Case 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Technology MOSFET (Metal Oxide)
Power - Max 54W
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 20A
Package Tray
Base Product Number RJM0603