RF4P060BGTCR
detaildesc

RF4P060BGTCR

Rohm Semiconductor

型号:

RF4P060BGTCR

封装:

DFN2020-8S

批次:

-

数据手册:

pdf

描述:

NCH 100V 6A, HUML2020L8, POWER M

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 53mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package DFN2020-8S
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerUDFN
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RF4P060