RF4E080GNTR
detaildesc

RF4E080GNTR

Rohm Semiconductor

型号:

RF4E080GNTR

封装:

HUML2020L8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 8A HUML2020L8

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1292

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.437

    $0.437

  • 10

    $0.3743

    $3.743

  • 100

    $0.279395

    $27.9395

  • 500

    $0.219526

    $109.763

  • 1000

    $0.169642

    $169.642

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package HUML2020L8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2W (Ta)
Series -
Package / Case 8-PowerUDFN
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RF4E080