RDX100N60FU6
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RDX100N60FU6

Rohm Semiconductor

型号:

RDX100N60FU6

封装:

TO-220FM

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 10A TO220FM

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 650mOhm @ 5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220FM
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 45W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number RDX100