RDN050N20FU6
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RDN050N20FU6

Rohm Semiconductor

型号:

RDN050N20FU6

封装:

TO-220FN

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 200V 5A TO220FN

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 292 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 18.6 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 720mOhm @ 2.5A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220FN
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 30W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk
Base Product Number RDN050