RD3P01BATTL1
detaildesc

RD3P01BATTL1

Rohm Semiconductor

型号:

RD3P01BATTL1

封装:

TO-252

批次:

-

数据手册:

pdf

描述:

PCH -100V -10A POWER MOSFET: RD3

购买数量:

递送:

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付款:

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库存 : 2448

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.121

    $1.121

  • 10

    $0.9196

    $9.196

  • 100

    $0.71535

    $71.535

  • 500

    $0.606309

    $303.1545

  • 1000

    $0.493905

    $493.905

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 50 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 240mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 25W (Ta)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number RD3P01