RD3G07BBGTL1
detaildesc

RD3G07BBGTL1

Rohm Semiconductor

型号:

RD3G07BBGTL1

封装:

TO-252

批次:

-

数据手册:

pdf

描述:

NCH 40V 150A, TO-252, POWER MOSF

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.3mOhm @ 70A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 89W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 150A (Ta), 70A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number RD3G07