R6086YNZ4C13
detaildesc

R6086YNZ4C13

Rohm Semiconductor

型号:

R6086YNZ4C13

封装:

TO-247G

批次:

-

数据手册:

pdf

描述:

NCH 600V 86A, TO-247, POWER MOSF

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 44mOhm @ 17A, 12V
Product Status Active
Vgs(th) (Max) @ Id 6V @ 4.6mA
Supplier Device Package TO-247G
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 781W (Tc)
Series -
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Package Tube
Base Product Number R6086