QS8M12TCR
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QS8M12TCR

Rohm Semiconductor

型号:

QS8M12TCR

封装:

TSMT8

批次:

-

数据手册:

pdf

描述:

MOSFET N/P-CH 30V 4A TSMT8

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.4nC @ 5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 42mOhm @ 4A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package TSMT8
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-SMD, Flat Lead
Technology MOSFET (Metal Oxide)
Power - Max 1.5W
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 4A
Package Tape & Reel (TR)
Base Product Number QS8M12