首页 / RF FET,MOSFET / PTAB182002TCV2R250XTMA1
PTAB182002TCV2R250XTMA1
detaildesc

PTAB182002TCV2R250XTMA1

Infineon Technologies

型号:

PTAB182002TCV2R250XTMA1

封装:

H-49248H-4

批次:

-

数据手册:

pdf

描述:

IC RF FET LDMOS 190W H-49248H-4

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Current Rating (Amps) 10µA
Current - Test 520 mA
Voltage - Rated 65 V
Mounting Type Surface Mount
Product Status Obsolete
Power - Output 29W
Supplier Device Package H-49248H-4
Series -
Voltage - Test 28 V
Package / Case H-49248H-4
Technology LDMOS
Mfr Infineon Technologies
Frequency 1.805GHz ~ 1.88GHz
Noise Figure -
Package Tape & Reel (TR)
Gain 14.8dB