首页 / 单 FET,MOSFET / PSMN6R0-30YLB,115
PSMN6R0-30YLB,115
detaildesc

PSMN6R0-30YLB,115

NXP Semiconductors

型号:

PSMN6R0-30YLB,115

封装:

LFPAK56, Power-SO8

批次:

-

数据手册:

pdf

描述:

NEXPERIA PSMN6R0-25YLD - 61A, 25

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1088 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.95V @ 1mA
Supplier Device Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 58W (Tc)
Series -
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Mfr NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C 71A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk