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PSMN2R9-30MLC,115
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PSMN2R9-30MLC,115

NXP USA Inc.

型号:

PSMN2R9-30MLC,115

品牌:

NXP USA Inc.

封装:

LFPAK33

批次:

-

数据手册:

pdf

描述:

30 V, 2.95 MILLI OHM LOGIC LEVEL

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 1500

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 947

    $0.304

    $287.888

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2419 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36.1 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.9mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.15V @ 1mA
Supplier Device Package LFPAK33
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 91W (Tc)
Series -
Package / Case SOT-1210, 8-LFPAK33 (5-Lead)
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk