PSMN2R5-30YL,115
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PSMN2R5-30YL,115

Nexperia USA Inc.

型号:

PSMN2R5-30YL,115

封装:

LFPAK56, Power-SO8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 100A LFPAK56

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3468 pF @ 12 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4mOhm @ 15A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.15V @ 1mA
Supplier Device Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 88W (Tc)
Series -
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PSMN2R5