PSMN2R3-100SSEJ
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PSMN2R3-100SSEJ

Nexperia USA Inc.

型号:

PSMN2R3-100SSEJ

封装:

LFPAK88 (SOT1235)

批次:

-

数据手册:

pdf

描述:

APPLICATION SPECIFIC POWER MOSFE

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 17200 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.2mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package LFPAK88 (SOT1235)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 341W (Ta)
Series -
Package / Case SOT-1235
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 255A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number PSMN2R3