PSMN015-100YLX
detaildesc

PSMN015-100YLX

NXP USA Inc.

型号:

PSMN015-100YLX

品牌:

NXP USA Inc.

封装:

LFPAK56, Power-SO8

批次:

-

数据手册:

pdf

描述:

PSMN015-100YL - N-CHANNEL 100V,

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6139 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 86.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 14.7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 1mA
Supplier Device Package LFPAK56, Power-SO8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 195W (Tc)
Series -
Package / Case SC-100, SOT-669
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk