PMXB360ENEAZ
NXP USA Inc.
型号:
PMXB360ENEAZ
品牌:
封装:
DFN1010D-3
批次:
-
数据手册:
描述:
PMXB360ENEA - 80 V, N-CHANNEL TR
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 40 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 1.1A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | DFN1010D-3 |
| Drain to Source Voltage (Vdss) | 80 V |
| Power Dissipation (Max) | 400mW (Ta), 6.25W (Tc) |
| Series | - |
| Package / Case | 3-XDFN Exposed Pad |
| Technology | MOSFET (Metal Oxide) |
| Mfr | NXP USA Inc. |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |
