PMXB360ENEAZ
detaildesc

PMXB360ENEAZ

Nexperia USA Inc.

型号:

PMXB360ENEAZ

封装:

DFN1010D-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 80V 1.1A DFN1010D-3

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 16284

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.3515

    $0.3515

  • 10

    $0.28595

    $2.8595

  • 100

    $0.195035

    $19.5035

  • 500

    $0.146243

    $73.1215

  • 1000

    $0.109687

    $109.687

  • 2000

    $0.100548

    $201.096

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 450mOhm @ 1.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 250µA
Supplier Device Package DFN1010D-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 400mW (Ta), 6.25W (Tc)
Series Automotive, AEC-Q100
Package / Case 3-XDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PMXB360