PMV117EN,215
detaildesc

PMV117EN,215

NXP USA Inc.

型号:

PMV117EN,215

品牌:

NXP USA Inc.

封装:

SOT-23 (TO-236AB)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 2.5A TO236AB

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -65°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 147 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 117mOhm @ 500mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 830mW (Tc)
Series TrenchMOS™
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PMV1