PMT560ENEAX
detaildesc

PMT560ENEAX

NXP Semiconductors

型号:

PMT560ENEAX

封装:

SOT-223

批次:

-

数据手册:

pdf

描述:

NEXPERIA PMT560ENEA - 100V N-CHA

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 112 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 715mOhm @ 1.1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 750mW (Ta)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk