PMPB215ENEAX
detaildesc

PMPB215ENEAX

Nexperia USA Inc.

型号:

PMPB215ENEAX

封装:

DFN2020MD-6

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 80V 1.9A DFN2020MD-6

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 20000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.475

    $0.475

  • 10

    $0.3857

    $3.857

  • 100

    $0.262485

    $26.2485

  • 500

    $0.196897

    $98.4485

  • 1000

    $0.147668

    $147.668

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 230mOhm @ 1.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.7V @ 250µA
Supplier Device Package DFN2020MD-6
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 1.6W (Ta), 15.6W (Tc)
Series Automotive, AEC-Q101
Package / Case 6-UDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PMPB215