PMGD8000LN,115
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PMGD8000LN,115

NXP USA Inc.

型号:

PMGD8000LN,115

品牌:

NXP USA Inc.

封装:

6-TSSOP

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 30V 0.125A 6TSSOP

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 5V
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8Ohm @ 10mA, 4V
Product Status Obsolete
Vgs(th) (Max) @ Id 1.5V @ 100µA
Supplier Device Package 6-TSSOP
Drain to Source Voltage (Vdss) 30V
Series TrenchMOS™
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 200mW
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 125mA
Package Tape & Reel (TR)
Base Product Number PMGD8