
NXP USA Inc.
型号:
PMGD8000LN,115
品牌:
封装:
6-TSSOP
批次:
-
描述:
MOSFET 2N-CH 30V 0.125A 6TSSOP
购买数量:
递送:

付款:
请发送RFQ,我们将立即回复。
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | 6-TSSOP |
| Drain to Source Voltage (Vdss) | 30V |
| Series | TrenchMOS™ |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 200mW |
| Mfr | NXP USA Inc. |
| Current - Continuous Drain (Id) @ 25°C | 125mA |
| Package | Tape & Reel (TR) |
| Base Product Number | PMGD8 |