PMCM6501UNEZ
detaildesc

PMCM6501UNEZ

NXP Semiconductors

型号:

PMCM6501UNEZ

封装:

6-WLCSP (1.48x0.98)

批次:

-

数据手册:

pdf

描述:

PMCM6501UNE - 20V, N-CHANNEL TRE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package 6-WLCSP (1.48x0.98)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 400mW
Series -
Package / Case 6-XFBGA, WLCSP
Technology MOSFET (Metal Oxide)
Mfr NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C 8.7A (Ta)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Bulk