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PJW5N10A_R2_00001
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PJW5N10A_R2_00001

Panjit International Inc.

型号:

PJW5N10A_R2_00001

封装:

SOT-223

批次:

-

数据手册:

pdf

描述:

100V N-CHANNEL ENHANCEMENT MODE

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 2490

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.475

    $0.475

  • 10

    $0.4066

    $4.066

  • 100

    $0.28291

    $28.291

  • 500

    $0.220875

    $110.4375

  • 1000

    $0.179531

    $179.531

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1413 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 115mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.1W (Ta), 5.2W (Tc)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 5A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJW5N10