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PJW4N06A_R2_00001
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PJW4N06A_R2_00001

Panjit International Inc.

型号:

PJW4N06A_R2_00001

封装:

SOT-223

批次:

-

数据手册:

pdf

描述:

60V N-CHANNEL ENHANCEMENT MODE M

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 5003

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4275

    $0.4275

  • 10

    $0.3344

    $3.344

  • 100

    $0.200545

    $20.0545

  • 500

    $0.185668

    $92.834

  • 1000

    $0.126255

    $126.255

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 100mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-223
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.1W (Ta)
Series -
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJW4N06A