PJQ4602_R1_00001
detaildesc

PJQ4602_R1_00001

Panjit International Inc.

型号:

PJQ4602_R1_00001

封装:

DFN3030B-8

批次:

-

数据手册:

pdf

描述:

30V COMPLEMENTARY ENHANCEMENT MO

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds 343pF @ 15V, 870pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.1V @ 250µA, 2.5V @ 250µA
Supplier Device Package DFN3030B-8
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta), 17.8W (Tc)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
Package Tape & Reel (TR)
Base Product Number PJQ4602