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PJQ4442P-AU_R2_000A1
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PJQ4442P-AU_R2_000A1

Panjit International Inc.

型号:

PJQ4442P-AU_R2_000A1

封装:

DFN3333-8

批次:

-

数据手册:

pdf

描述:

40V N-CHANNEL ENHANCEMENT MODE M

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1759 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package DFN3333-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 2.4W (Ta), 53.6W (Tc)
Series Automotive, AEC-Q101
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJQ4442