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PJP60R620E_T0_00001
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PJP60R620E_T0_00001

Panjit International Inc.

型号:

PJP60R620E_T0_00001

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

600V N-CHANNEL SUPER JUNCTION MO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 457 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 620mOhm @ 2.4A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 2W (Ta), 78W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta), 7A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number PJP60R