首页 / 单 FET,MOSFET / PJD9N10A_L2_00001
PJD9N10A_L2_00001
detaildesc

PJD9N10A_L2_00001

Panjit International Inc.

型号:

PJD9N10A_L2_00001

封装:

TO-252

批次:

-

数据手册:

pdf

描述:

100V N-CHANNEL MOSFET

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 11609

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5035

    $0.5035

  • 10

    $0.4332

    $4.332

  • 100

    $0.300865

    $30.0865

  • 500

    $0.234897

    $117.4485

  • 1000

    $0.190931

    $190.931

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1021 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 152mOhm @ 4.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W (Ta), 31W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta), 9A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD9