首页 / 单 FET,MOSFET / PJD80N04-AU_L2_000A1
PJD80N04-AU_L2_000A1
detaildesc

PJD80N04-AU_L2_000A1

Panjit International Inc.

型号:

PJD80N04-AU_L2_000A1

封装:

TO-252

批次:

-

数据手册:

pdf

描述:

40V N-CHANNEL ENHANCEMENT MODE M

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 5990

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.064

    $1.064

  • 10

    $0.874

    $8.74

  • 100

    $0.67982

    $67.982

  • 500

    $0.576194

    $288.097

  • 1000

    $0.469376

    $469.376

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 2.4W (Ta), 79.4W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 80A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD80