首页 / 单 FET,MOSFET / PJD50N10AL_L2_00001
PJD50N10AL_L2_00001
detaildesc

PJD50N10AL_L2_00001

Panjit International Inc.

型号:

PJD50N10AL_L2_00001

封装:

TO-252

批次:

-

数据手册:

pdf

描述:

100V N-CHANNEL ENHANCEMENT MODE

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 1975

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.8645

    $0.8645

  • 10

    $0.7467

    $7.467

  • 100

    $0.5168

    $51.68

  • 500

    $0.431851

    $215.9255

  • 1000

    $0.367526

    $367.526

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1485 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2W (Ta), 83W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta), 42A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number PJD50