PHK4NQ10T,518
NXP USA Inc.
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产品信息
参数信息
用户指南
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Series | TrenchMOS™ |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Mfr | NXP USA Inc. |
| Current - Continuous Drain (Id) @ 25°C | - |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | PHK4N |
