PDTC115EMB,315
detaildesc

PDTC115EMB,315

NXP Semiconductors

型号:

PDTC115EMB,315

封装:

DFN1006B-3

批次:

-

数据手册:

pdf

描述:

PDTC115E - NPN RESISTOR-EQUIPPED

购买数量:

递送:

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付款:

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库存 : 189658

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 11225

    $0.0285

    $319.9125

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Frequency - Transition 230 MHz
Current - Collector (Ic) (Max) 20 mA
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Resistor - Base (R1) 100 kOhms
Mounting Type Surface Mount
Voltage - Collector Emitter Breakdown (Max) 50 V
Product Status Active
Supplier Device Package DFN1006B-3
Series -
Transistor Type NPN - Pre-Biased
Package / Case SC-101, SOT-883
Power - Max 250 mW
Mfr NXP Semiconductors
Resistor - Emitter Base (R2) 100 kOhms
Current - Collector Cutoff (Max) 1µA
Package Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Base Product Number PDTC115