PCDB0465G1_R2_00001
Panjit International Inc.
型号:
PCDB0465G1_R2_00001
封装:
TO-263
批次:
-
数据手册:
描述:
DIODE SIL CARBIDE 650V 4A TO263
购买数量:
递送:
付款:
库存 : 2400
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$2.261
$2.261
10
$1.881
$18.81
100
$1.49682
$149.682
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 146pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-263 |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Mfr | Panjit International Inc. |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Current - Average Rectified (Io) | 4A |
| Base Product Number | PCDB0465 |
