NXPSC10650DJ
WeEn Semiconductors
型号:
NXPSC10650DJ
封装:
DPAK
批次:
-
数据手册:
描述:
DIODE SIL CARBIDE 650V 10A DPAK
购买数量:
递送:
付款:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Supplier Device Package | DPAK |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
| Series | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | WeEn Semiconductors |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Operating Temperature - Junction | 175°C (Max) |
| Current - Average Rectified (Io) | 10A |
| Base Product Number | NXPSC |
