NVH4L020N120SC1

onsemi

型号:

NVH4L020N120SC1

品牌:

封装:

TO-247-4L

批次:

数据手册:

描述:

SICFET N-CH 1200V 102A TO247

购买数量:

递送:

付款:

库存 : 497

最小起订量: 1 最小递增量: 1

数量

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2943 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	510W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	NVH4L020