NTMS4P01R2
onsemi
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 9.6 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 4.5A, 4.5V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 1.15V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 12 V |
| Power Dissipation (Max) | 790mW (Ta) |
| Series | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Vgs (Max) | ±10V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Package | Tape & Reel (TR) |
| Base Product Number | NTMS4P |
