NTMD6601NR2G
onsemi
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 2.2A, 10V |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 80V |
| Series | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 600mW |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
| Package | Tape & Reel (TR) |
| Base Product Number | NTMD66 |
.JPG)
