NTH4L080N120SC1

onsemi

Product No:

NTH4L080N120SC1

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Package:

TO-247-4L

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Description:

SICFET N-CH 1200V 29A TO247-4

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 800 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 5mA
Supplier Device Package	TO-247-4L
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	170W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Vgs (Max)	+25V, -15V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	NTH4L080