NTBG080N120SC1
detaildesc

NTBG080N120SC1

onsemi

型号:

NTBG080N120SC1

品牌:

onsemi

封装:

D2PAK-7

批次:

-

数据手册:

pdf

描述:

SICFET N-CH 1200V 30A D2PAK-7

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 800

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $12.654

    $12.654

  • 10

    $11.14445

    $111.4445

  • 100

    $9.638415

    $963.8415

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
Product Status Active
Vgs(th) (Max) @ Id 4.3V @ 5mA
Supplier Device Package D2PAK-7
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 179W (Tc)
Series -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology SiCFET (Silicon Carbide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Vgs (Max) +25, -15V
Drive Voltage (Max Rds On, Min Rds On) 20V
Package Tape & Reel (TR)
Base Product Number NTBG080