NTBG020N090SC1

onsemi

型号:

NTBG020N090SC1

品牌:

封装:

D2PAK-7

批次:

数据手册:

描述:

SICFET N-CH 900V 9.8A/112A D2PAK

购买数量:

递送:

付款:

库存 : 1045

最小起订量: 1 最小递增量: 1

数量

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总价

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 450 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 20mA
Supplier Device Package	D2PAK-7
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	3.7W (Ta), 477W (Tc)
Series	-
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta), 112A (Tc)
Vgs (Max)	+19V, -10V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tape & Reel (TR)
Base Product Number	NTBG020