首页 / 存储器 / MT53E512M64D2NZ-46 WT:B TR
MT53E512M64D2NZ-46 WT:B TR
detaildesc

MT53E512M64D2NZ-46 WT:B TR

Micron Technology Inc.

型号:

MT53E512M64D2NZ-46 WT:B TR

封装:

376-WFBGA (14x14)

批次:

-

数据手册:

pdf

描述:

IC DRAM 32GBIT PAR 376WFBGA

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

DigiKey Programmable Not Verified
Operating Temperature -25°C ~ 85°C (TC)
Clock Frequency 2.133 GHz
Memory Interface Parallel
Memory Organization 512M x 64
Mounting Type Surface Mount
Product Status Active
Memory Type Volatile
Supplier Device Package 376-WFBGA (14x14)
Series -
Write Cycle Time - Word, Page 18ns
Access Time 3.5 ns
Memory Size 32Gbit
Package / Case 376-WFBGA
Technology SDRAM - Mobile LPDDR4
Voltage - Supply 1.06V ~ 1.17V
Mfr Micron Technology Inc.
Package Tape & Reel (TR)
Memory Format DRAM
Base Product Number MT53E512