MSCSM120DAM31CTBL1NG
Microchip Technology
型号:
MSCSM120DAM31CTBL1NG
封装:
-
批次:
-
数据手册:
描述:
PM-MOSFET-SIC-SBD-BL1
购买数量:
递送:
付款:
库存 : 7
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$112.9835
$112.9835
100
$83.94219
$8394.219
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
| Mounting Type | Chassis Mount |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | - |
| Drain to Source Voltage (Vdss) | 1200 V |
| Power Dissipation (Max) | 310W |
| Series | - |
| Package / Case | Module |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | Microchip Technology |
| Current - Continuous Drain (Id) @ 25°C | 79A |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Bulk |
| Base Product Number | MSCSM120 |
