MBR400100CTR
detaildesc

MBR400100CTR

GeneSiC Semiconductor

型号:

MBR400100CTR

封装:

Twin Tower

批次:

-

数据手册:

pdf

描述:

DIODE MODULE 100V 200A 2TOWER

购买数量:

递送:

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付款:

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库存 : 1

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $97.812

    $97.812

  • 10

    $85.7907

    $857.907

  • 25

    $81.42944

    $2035.736

  • 50

    $78.27829

    $3913.9145

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产品信息

参数信息

用户指南

Speed Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type Chassis Mount
Product Status Active
Supplier Device Package Twin Tower
Current - Reverse Leakage @ Vr 5 mA @ 20 V
Series -
Package / Case Twin Tower
Technology Schottky, Reverse Polarity
Diode Configuration 1 Pair Common Anode
Voltage - Forward (Vf) (Max) @ If 840 mV @ 200 A
Mfr GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max) 100 V
Package Bulk
Current - Average Rectified (Io) (per Diode) 200A
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number MBR400100