LND250K1-G
detaildesc

LND250K1-G

Microchip Technology

型号:

LND250K1-G

封装:

SOT-23 (TO-236AB)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 500V 13MA SOT23

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 17886

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5035

    $0.5035

  • 25

    $0.4275

    $10.6875

  • 100

    $0.415625

    $41.5625

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
FET Type N-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package SOT-23 (TO-236AB)
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 360mW (Ta)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 13mA (Tj)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 0V
Package Tape & Reel (TR)
Base Product Number LND250