IXTP8N65X2M
detaildesc

IXTP8N65X2M

IXYS

型号:

IXTP8N65X2M

品牌:

IXYS

封装:

TO-220

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 4A TO220

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 46

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.8025

    $2.8025

  • 10

    $2.51655

    $25.1655

  • 100

    $2.0615

    $206.15

  • 500

    $1.754916

    $877.458

  • 1000

    $1.480052

    $1480.052

  • 2000

    $1.406048

    $2812.096

  • 5000

    $1.35319

    $6765.95

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 32W (Tc)
Series Ultra X2
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr IXYS
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number IXTP8