IXTN660N04T4
IXYS
库存 : 1326
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$29.1175
$29.1175
10
$26.8527
$268.527
100
$22.93072
$2293.072
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 44000 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 860 nC @ 10 V |
| Mounting Type | Chassis Mount |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-227B |
| Drain to Source Voltage (Vdss) | 40 V |
| Power Dissipation (Max) | 1040W (Tc) |
| Series | Trench |
| Package / Case | SOT-227-4, miniBLOC |
| Technology | MOSFET (Metal Oxide) |
| Mfr | IXYS |
| Current - Continuous Drain (Id) @ 25°C | 660A (Tc) |
| Vgs (Max) | ±15V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | IXTN660 |
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