IXTH6N100D2
detaildesc

IXTH6N100D2

IXYS

型号:

IXTH6N100D2

品牌:

IXYS

封装:

TO-247 (IXTH)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 1000V 6A TO247

购买数量:

递送:

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付款:

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库存 : 673

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $8.569

    $8.569

  • 10

    $7.7406

    $77.406

  • 100

    $6.408225

    $640.8225

  • 500

    $5.580224

    $2790.112

  • 1000

    $4.86019

    $4860.19

  • 2000

    $4.680184

    $9360.368

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package TO-247 (IXTH)
Drain to Source Voltage (Vdss) 1000 V
Power Dissipation (Max) 300W (Tc)
Series Depletion
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Mfr IXYS
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) -
Package Tube
Base Product Number IXTH6